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CD214A-F1100 bảng dữ liệu(PDF) 1 Page - Bourns Electronic Solutions

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CD214A-F150~F1600 Fast Response Rectifiers
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
Lead free device (RoHS compliant*)
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
General Information
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 1.0 A with a choice of repetitive peak reverse voltage of 50 V up to 600 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214A-
Unit
F150
F1100
F1150
F1200
F1400
F1600
Maximum Repetitive
Peak Reverse Voltage
VRRM
50
100
150
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
105
140
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
400
600
V
Maximum Average Forward
Rectified Current1
I(AV)
1.0
A
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ = 25 °C)
IR
5.0
µA
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ = 125 °C)
IR
50.0
µA
Typical Junction Capacitance2
CJ
10
pF
Maximum Instantaneous
Forward Voltage @ 1 A
VF
0.95
1.25
1.7
V
Typical Thermal Resistance3
RθJA
34
°C/W
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
30
25
A
Maximum Reverse Recovery Time4
Trr
35
ns
Notes:
1 See Forward Derating Curve.
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas.
4 Reverse recovery test condition: IF 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Parameter
Symbol
CD214A-F150~F1600
Unit
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C


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