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CD214A-F1100 bảng dữ liệu(PDF) 1 Page - Bourns Electronic Solutions |
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CD214A-F1100 bảng dữ liệu(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page CD214A-F150~F1600 Fast Response Rectifiers *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Features ■ Lead free device (RoHS compliant*) ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass Passivated Rectifier Diodes offer a forward current of 1.0 A with a choice of repetitive peak reverse voltage of 50 V up to 600 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214A- Unit F150 F1100 F1150 F1200 F1400 F1600 Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 V Maximum Average Forward Rectified Current1 I(AV) 1.0 A DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 25 °C) IR 5.0 µA DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 125 °C) IR 50.0 µA Typical Junction Capacitance2 CJ 10 pF Maximum Instantaneous Forward Voltage @ 1 A VF 0.95 1.25 1.7 V Typical Thermal Resistance3 RθJA 34 °C/W Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 25 A Maximum Reverse Recovery Time4 Trr 35 ns Notes: 1 See Forward Derating Curve. 2 Measured at 1 MHz and an applied reverse voltage of 4.0 V. 3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas. 4 Reverse recovery test condition: IF 0.5 A, IR = 1.0 A, Irr = 0.25 A. Parameter Symbol CD214A-F150~F1600 Unit Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C |
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Mô tả tương tự - CD214A-F1100 |
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