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BC337-25ZL1 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1
Publication Order Number:
BC337/D
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
Collector − Emitter Voltage
VCEO
45
25
Vdc
Collector − Base Voltage
VCBO
50
30
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
800
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TO−92 (TO−226)
CASE 29
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
xxxx
= Specific Device Code
Y
= Year
WW
= Work Week
COLLECTOR
1
2
BASE
3
EMITTER
BC33
xxxx
YWW


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