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STP5NK100Z bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
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STP5NK100Z - STF5NK100Z - STW5NK100Z
Electrical characteristics
5/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
1000
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 1.75 A
2.7
3.7
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 1.75A
4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1154
106
21.3
pF
pF
pF
Cosseq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 800V
46.8
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=500 V, ID= 1.75 A,
RG=4.7Ω, VGS=10V
(see Figure 20)
22.5
7.7
51.5
19
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800V, ID = 3.5 A
VGS =10V
(see Figure 21)
42
7.3
21.7
59
nC
nC
nC


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