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1 / 10 page IRF2907ZS-7PPbF HEXFET® Power MOSFET VDSS = 75V RDS(on) = 3.8mΩ ID = 160A 08/03/05 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. S D G Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax PD - 97031 S (Pin 2, 3, 5, 6, 7) G (Pin 1) Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.50 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient j ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) ij ––– 40 Max. 180 120 700 160 10 lbf•in (1.1N•m) 300 2.0 ± 20 160 410 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 Description Specifically designed for high current, high reliabil- ity applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and ad- vanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junctionoperatingtemperature,fastswitchingspeed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications. |
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