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IRF2907ZS-7PPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

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Giải thích chi tiết về linh kiện  HEXFET짰 Power MOSFET
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
Logo IRF - International Rectifier

IRF2907ZS-7PPBF bảng dữ liệu(HTML) 1 Page - International Rectifier

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IRF2907ZS-7PPbF
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 3.8mى
ID = 160A
08/03/05
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
PD - 97031
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.50
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
j
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
40
Max.
180
120
700
160
10 lbf•in (1.1N•m)
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junctionoperatingtemperature,fastswitchingspeed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.


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