STP10NK50Z datasheet(3/12 Pages) STMICROELECTRONICS

tên linh kiện	STP10NK50Z

Giải thích chi tiết về linh kiện	N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET

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STP10NK50Z - STF10NK50Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 7: On/Off

Table 8: Dynamic

Table 9: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 4.5 A

0.55

0.7

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 15 V, ID = 4.5 A

7

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

1219

159

40

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400 V

806

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 250 V, ID = 4.5 A

RG = 4.7Ω VGS = 10 V

(see Figure 19)

19

17

43

15

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V, ID = 9 A,

VGS = 10 V

(see Figure 22)

39.2

7.42

20.7

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

9

36

A

VSD (1)

Forward On Voltage

ISD = 9 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 9 A, di/dt = 100 A/µs

VDD = 35 V, Tj = 25°C

(see Figure 20)

268

1.83

13.7

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 9 A, di/dt = 100 A/µs

VDD = 35 V, Tj = 150°C

(see Figure 20)

343

2.6

15.15

ns

µC

A

Số phần tương tự - STP10NK50Z

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP10NK60Z	409Kb / 19P	N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
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STMicroelectronics	STP10NK60Z/FP	409Kb / 19P	N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
STMicroelectronics	STP10NK60ZFP	409Kb / 19P	N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

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