3

°C, unless specified otherwise)

Notes:

1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.

2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.

GAIN (dB)

Figure 1. Gain distribution @ 15 mA.

LSL = 13.5, Nominal = 15.1, USL = 16.5

13

17

14

15

16

240

200

160

120

80

40

0

LSL = 3.1, Nominal = 3.4, USL = 3.8

34

3.2

3.4

3.6

3.8

400

300

200

100

0

FREQUENCY (GHz)

Figure 3. Gain vs. Frequency at Id = 15 mA.

06

2

1

3

5

4

20

15

10

5

0

FREQUENCY (GHz)

Figure 4. P1dB vs. Frequency at Id=15 mA.

06

2

1

3

5

4

10

5

0

-5

-10

FREQUENCY (GHz)

Figure 5. OIP3 vs. Frequency at Id=15 mA.

06

2

1

3

5

4

20

15

10

5

0

FREQUENCY (GHz)

Figure 6. NF vs Frequency at Id=15 mA.

06

2

1

3

5

4

6

5

4

3

2

Vd (V)

Figure 7. Id vs. Vd and Temperature.

05

2

1

3

4

35

30

25

20

15

10

5

0

-40

°C

25

°C

85

°C

Id (mA)

Figure 8. Gain vs. Id and Temperature at 900 MHz.

040

20

10

30

18

17

16

15

14

13

12

-40

°C

25

°C

85

°C