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74AHCT374D bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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2 / 20 page 1999 Sep 28 2 Philips Semiconductors Product specification Octal D-type flip-flop; positive edge-trigger; 3-state 74AHC374; 74AHCT374 FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V • Balanced propagation delays • All inputs have Schmitt-trigger actions • Inputs accepts voltages higher than VCC • Common 3-state output enable input • ICC category: MSI • For AHC only: operates with CMOS input levels • For AHCT only: operates with TTL input levels • Specified from −40 to +85 and +125 °C. DESCRIPTION The 74AHC/AHCT374 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. The 74AHC/AHCT374 are octal D-type flip-flops featuring separate D-type inputs for each flip-flop and 3-state outputs for bus oriented applications. A clock (CP) and an output enable (OE) input are common to all flip-flops. The 8 flip-flops will store the state of their individual D-inputs that meet the set-up and hold times requirements on the LOW-to-HIGH CP transition. When OE is LOW the contents of the 8 flip-flops are available at the outputs. When OE is HIGH, the outputs go to the high-impedance OFF-state. Operation of the OE input does not affect the state of the flip-flops. The ‘374’ is functionally identical to the ‘534’, but has non-inverting outputs. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; ∑ (CL × VCC2 × fo) = sum of outputs; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT AHC AHCT tPHL/tPLH propagation delay; CP to Qn CL = 15 pF; VCC = 5 V 3.5 5.0 ns fmax maximum clock frequency CL = 15 pF; VCC =5V 50 − MHz CI input capacitance VI =VCC or GND 3.0 3.0 pF CO output capacitance 4.0 4.0 pF CPD power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 10 12 pF |
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