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AD5243BRM10-RL7 bảng dữ liệu(PDF) 3 Page - Analog Devices

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AD5243BRM10-RL7 bảng dữ liệu(HTML) 3 Page - Analog Devices

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AD5243/AD5248
Rev. 0 | Page 3 of 20
ELECTRICAL CHARACTERISTICS—2.5 kΩ VERSION
VDD = 5 V ± 10%, or 3 V ± 10%; VA = +VDD; VB = 0 V; −40°C < TA < +125°C; unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity2
R-DNL
RWB, VA = no connect
−2
±0.1
+2
LSB
Resistor Integral Nonlinearity2
R-INL
RWB, VA = no connect
−6
±0.75
+6
LSB
Nominal Resistor Tolerance3
∆RAB
TA = 25°C
−20
+55
%
Resistance Temperature Coefficient
(∆RAB/RAB )/∆T
VAB = VDD, wiper = no connect
35
ppm/°C
RWB (Wiper Resistance)
RWB
Code = 0x00, VDD = 5 V
160
200
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications Apply to All VRs)
Differential Nonlinearity4
DNL
−1.5
±0.1
+1.5
LSB
Integral Nonlinearity
INL
−2
±0.6
+2
LSB
Voltage Divider Temperature
Coefficient
(∆VW/VW)/∆T
Code = 0x80
15
ppm/°C
Full-Scale Error
VWFSE
Code = 0xFF
−10
−2.5
0
LSB
Zero-Scale Error
VWZSE
Code = 0x00
0
2
10
LSB
RESISTOR TERMINALS
Voltage Range5
VA, VB, VW
GND
VDD
V
Capacitance6 A, B
CA, CB
f = 1 MHz, measured to GND, Code = 0x80
45
pF
Capacitance6 W
CW
f = 1 MHz, measured to GND, Code = 0x80
60
pF
Shutdown Supply Current7
IA_SD
VDD = 5.5 V
0.01
1
µA
Common-Mode Leakage
ICM
VA = VB = VDD/2
1
nA
DIGITAL INPUTS AND OUTPUTS
Input Logic High
VIH
VDD = 5 V
2.4
V
Input Logic Low
VIL
VDD = 5 V
0.8
V
Input Logic High
VIH
VDD = 3 V
2.1
V
Input Logic Low
VIL
VDD = 3 V
0.6
V
Input Current
IIL
VIN = 0 V or 5 V
±1
µA
Input Capacitance6
CIL
5
pF
POWER SUPPLIES
Power Supply Range
VDD RANGE
2.7
5.5
V
Supply Current
IDD
VIH = 5 V or VIL = 0 V
3.5
6
µA
Power Dissipation8
PDISS
VIH = 5 V or VIL = 0 V, VDD = 5 V
30
µW
Power Supply Sensitivity
PSS
VDD = 5 V ± 10%, Code = midscale
±0.02
±0.08
%/%
DYNAMIC CHARACTERISTICS 9
Bandwidth −3 dB
BW_2.5 K
Code = 0x80
4.8
MHz
Total Harmonic Distortion
THDW
VA = 1 V rms, VB = 0 V, f = 1 kHz
0.1
%
VW Settling Time
tS
VA = 5 V, VB = 0 V, ±1 LSB error band
1
µs
Resistor Noise Voltage Density
eN_WB
RWB = 1.25 kΩ, RS = 0
3.2
nV/
√Hz
See notes at end of section.


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