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H04N60F bảng dữ liệu(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 5 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60E, H04N60F HSMC Product Specification H04N60 Series N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified Absolute Maximum Ratings Symbol Parameter Value Units I D Drain to Current (Continuous) 4 A I DM Drain to Current (Pulsed) 16 A V GS Gate-to-Source Voltage (Continue) ±30 V Total Power Dissipation (T C=25 oC) H04N60E (TO-220AB) H04N60F (TO-220FP) 70 30 W P D Derate above 25 °C H04N60E (TO-220AB) H04N60F (TO-220FP) 0.56 0.2 W/ °C T j, Tstg Operating and Storage Temperature Range -55 to 150 °C E AS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 °C (V DD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) 250 mJ T L Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 260 °C H04N60 Series Pin Assignment 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 1 2 3 Tab H04N60 Series Symbol: G D S |
Số phần tương tự - H04N60F |
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Mô tả tương tự - H04N60F |
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