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1PS89SS05 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  High-speed double diodes
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1999 Jun 08
2
Philips Semiconductors
Preliminary specification
High-speed double diodes
1PS89SS04; 1PS89SS05;
1PS89SS06
FEATURES
• Power dissipation comparable to
SOT23
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in
planar technology, with different
configurations, in an ultra small
SC-89 (SOT490) plastic SMD
package.
PINNING
PIN
1PS89SS..
04
05
06
1a1
a1
k1
2k2
a2
k2
3k1,a2
k1,k2
a1,a2
Fig.1
Simplified outline
(SC-89; SOT490) and
pin configuration.
fpage
12
Top view
MBK837
3
Fig.2
1PS89SS04 diode
configuration (symbol).
MGL550
12
3
Fig.3
1PS89SS05 diode
configuration (symbol).
MGL551
12
3
Fig.4
1PS89SS06 diode
configuration (symbol).
MGL552
1
3
2
MARKING
TYPE NUMBER
MARKING
CODE
1PS89SS04
S4
1PS89SS05
S5
1PS89SS06
S6
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specified
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
Tamb =25 °C; note 1; see Fig.5
single diode loaded
200
mA
both diodes loaded
125
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.7
t=1
µs
4A
t=1s
0.5
A


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