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1PS89SS05 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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2 / 12 page 1999 Jun 08 2 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04; 1PS89SS05; 1PS89SS06 FEATURES • Power dissipation comparable to SOT23 • Ultra small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 80 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High speed switching in e.g. surface mounted circuits. DESCRIPTION Two high-speed switching diodes in planar technology, with different configurations, in an ultra small SC-89 (SOT490) plastic SMD package. PINNING PIN 1PS89SS.. 04 05 06 1a1 a1 k1 2k2 a2 k2 3k1,a2 k1,k2 a1,a2 Fig.1 Simplified outline (SC-89; SOT490) and pin configuration. fpage 12 Top view MBK837 3 Fig.2 1PS89SS04 diode configuration (symbol). MGL550 12 3 Fig.3 1PS89SS05 diode configuration (symbol). MGL551 12 3 Fig.4 1PS89SS06 diode configuration (symbol). MGL552 1 3 2 MARKING TYPE NUMBER MARKING CODE 1PS89SS04 S4 1PS89SS05 S5 1PS89SS06 S6 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode unless otherwise specified VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 80 V IF continuous forward current Tamb =25 °C; note 1; see Fig.5 single diode loaded − 200 mA both diodes loaded − 125 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.7 t=1 µs − 4A t=1s − 0.5 A |
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