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1N4001ID bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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1N4001ID bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
2 / 5 page 1996 Jun 10 2 Philips Semiconductors Product specification Rectifiers 1N4001ID to 1N4007ID FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. (1) Implotec is a trademark of Philips. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns a k MAM123 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage 1N4001ID − 50 V 1N4002ID − 100 V 1N4003ID − 200 V 1N4004ID − 400 V 1N4005ID − 600 V 1N4006ID − 800 V 1N4007ID − 1000 V VR continuous reverse voltage 1N4001ID − 50 V 1N4002ID − 100 V 1N4003ID − 200 V 1N4004ID − 400 V 1N4005ID − 600 V 1N4006ID − 800 V 1N4007ID − 1000 V IF(AV) average forward current averaged over any 20 ms period; Tamb =75 °C; see Fig.2 − 1.00 A averaged over any 20 ms period; Tamb = 100 °C; see Fig.2 − 0.75 A IFRM repetitive peak forward current − 10 A IFSM non-repetitive peak forward current half sinewave; 60 Hz − 20 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C |
Số phần tương tự - 1N4001ID |
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Mô tả tương tự - 1N4001ID |
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