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MV2109 bảng dữ liệu(PDF) 2 Page - E-Tech Electronics LTD |
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MV2109 bảng dữ liệu(HTML) 2 Page - E-Tech Electronics LTD |
2 / 3 page I6–2/3 Min Nom M a x Typ Min Typ Max MMBV2101LT1/MV2101 6.1 6.8 7.5 450 2.5 2.7 3.2 MMBV2103LT1 9.0 10 11 400 2.5 2.9 3.2 MV2104 10.8 12 13.2 400 2.5 2.9 3.2 MMBV2105LT1/MV2105 13.5 15 16.5 400 2.5 2.9 3.2 MMBV2107LT1 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2108LT1/MV2108 24.3 27 29.7 300 2.5 3.0 3.2 MMBV2109LT1/MV2109 29.7 33 36.3 200 2.5 3.0 3.2 MV2111 42.3 47 51.7 150 2.5 3.0 3.2 MV2115 90 100 110 100 2.6 3.0 3.3 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 C T , Diode Capacitance V R = 4.0 Vdc, f = 1.0 MHz pF T R, Tuning Ratio C 2 /C 30 f = 1.0 MHz Q, Figure of Merit V R = 4.0 Vdc, f = 50 MHz PARAMETER TEST METHODS 1. C T , DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a ca-pacitance bridge (Boonton Electronics Model 75A or equivalent). 2. T R, TUNING RATIO T R is the ratio of C T measured at 2.0 Vdc divided by C T measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an ad-mittance bridge at the specified frequency and substitut-ing in the following equations: Q = 2 πfC G (Booton Electronics Model 33As8 or equivalent).Use Lead Length 1/16”. 4.T CC,DIODECAPACITANCETEMPERATURE COEFFICIENT T CC is guaranteed by comparing CT at V R=4.0Vdc,f=1.0MHz,T A= – 65°C with CT at V R=4.0Vdc, f=1.0MHz,T A= + 85°C in the following equation,which defines TC C: C T(+85°C)– C T(–65°C )106 TC C = 85+65 . C T(25°C) ~ ~ Device |
Số phần tương tự - MV2109 |
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Mô tả tương tự - MV2109 |
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