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STD2240NL bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

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Giải thích chi tiết về linh kiện  N-Channel E nhancement Mode Field Effect Transistor
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
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=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
40
V
Zero Gate Voltage Drain Current
IDSS
VDS 32V, VGS 0V
=
=
1
Gate-Body Leakage
IGSS
VGS 20V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
1.0
3.0
V
Drain-Source On-State R esistance
R DS(ON)
VGS 10V, ID 10A
VGS 4.5V, ID 8A
60
On-State Drain Current
ID(ON)
VDS = 5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS 10V, ID 10A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =25V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 20V
ID = 1 A
VGS = 4.5V
R GEN = 3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =20V, ID = 10A
VGS =10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
35
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =20V, ID =10A,VGS =10V
nC
VDS =20V, ID =10A,VGS =4.5V
20
70
85
840
18.7
12.1
18.6
4.8
15.2
3.1
3.9
8.9
12
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
950
98
82
2.5
18
5.6
22
14
22
10
4.6
3.6
S T U/D2240NL
1.8
25
45


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