PRELIMINARY PRODUCT INFORMATION

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

- Super Low Noise Figure & Associated Gain :

NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA

- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )

APPLICATIONS

- Satellite Radio(SDARS, DMB, etc.) antenna LNA

- GPS antenna LNA

- LNA for Micro-wave communication system

ORDERING INFORMATION

Part Number

Order Number

Quantity

Marking

Supplying Form

NE3509M04

NE3509M04-A

50pcs (Non reel)

NE3509M04-T2

NE3509M04-T2-A

3 Kpcs/reel

V80

- 8 mm wide emboss taping

- Pin1(Source), Pin2(Drain)

face the perforation side of the tape

Remark To order evaluation samples, please contact your local NEC sales office.

Part number for sample order: NE3509M04

°C )

PARAMETER

SYMBOL

RATINGS

UNIT

V

e

g

a

t

l

o

V

e

c

r

u

o

S

o

t

n

i

a

r

D

DS

V

0

.

4

V

e

g

a

t

l

o

V

e

c

r

u

o

S

o

t

e

t

a

G

GS

V

0

.

3

-

I

t

n

e

r

r

u

C

n

i

a

r

D

D

A

m

0

0

2

G

I

t

n

e

r

r

u

C

e

t

a

G

µA

Total Power Dissipation

W

m

0

5

1

T

e

r

u

t

a

r

e

p

m

e

T

l

e

n

n

a

h

C

ch

+150

°C

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

stg

- 65 to +150

°C

Note Mounted on 1.08cm

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.

HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3509M04

Document No. P*****EJ0V0PM00 (10th edition)

© NEC Compound Semiconductor Devices 2005

Date Published October 2005 CP(K)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.