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ST2303 bảng dữ liệu(PDF) 1 Page - Stanson Technology |
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ST2303 bảng dữ liệu(HTML) 1 Page - Stanson Technology |
1 / 6 page P Channel Enchancement Mode MOSFET ST2303 -1.7A DESCRIPTION The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain S: Subcontractor Y: Year Code W: Process Code Page 1 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 FEATURE - 30V/-2.6A, RDS(ON) = 130m-ohm @VGS = -10V -30V/-2.0A, RDS(ON) = 180m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 1 2 D G S 3 1 2 S03YA |
Số phần tương tự - ST2303 |
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Mô tả tương tự - ST2303 |
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