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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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SS12T3 bảng dữ liệu(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 Publication Order Number: NSS12200W/D NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • High Current Capability (3 A) • High Power Handling (Up to 650 mW) • Low VCE(s) (170 mV Typical @ 1 A) • Small Size • This is a Pb−Free Device Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −2.0 −3.0 Adc Electrostatic Discharge ESD HBM Class 3 MM Class C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com V2 = Specific Device Code M = Date Code G = Pb−Free Package 12 VOLTS 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER SC−88/SOT−363 CASE 419B STYLE 20 1 V2M G 1 6 DEVICE MARKING Device Package Shipping† ORDERING INFORMATION NSS12200WT1G SOT−363 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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