LESHAN RADIO COMPANY, LTD.

LDTC114EM3T5G_S-1/10

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

With Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SOT-723 package

which is designed for low power surface mount applications.

LDTC114EM3T5G

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

260 (Note 1)

600 (Note 2)

2.0 (Note 1)

4.8 (Note 2)

mW

Thermal Resistance –

Junction-to-Ambient

480 (Note 1)

205 (Note 2)

°C/W

Storage Temperature Range

–55 to +150

°C

xx

= Specific Device Code

M

= Date Code

MARKING DIAGRAM

3

2

1

XX M

mW/

°C

Simplifies Circuit Design

Reduces Component Count

The SOT-723 Package can be Soldered using Wave or Reflow.

Available in 4 mm, 8000 Unit Tape & Reel

These are Pb-Free Devices.

Reduces Board Space

Version 1.0

Series

SOT-723

1

2

3

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

R1

R2

°C

150

Junction Temperature

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad