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SS12T3G bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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SS12T3G bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 4 page SS12, SS14 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage SS12 SS14 VRRM VRWM VR 20 40 V Average Rectified Forward Current (At Rated VR, TC = 120°C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A Storage/Operating Case Temperature Tstg, TC −55 to +150 °C Operating Junction Temperature TJ −55 to +150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) RqJL RqJA 35 86 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) see Figure 2for other Values (IF = 1.0 A) VF TJ = 25°C V 0.47 Maximum Instantaneous Reverse Current see Figure 4 for other Values (VR = 20 V) (VR = 40 V) IR TJ = 25°C TJ = 100°C mA 0.045 0.1 2.0 5.0 1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 0.1 1 10 0.10 0.30 0.50 0.70 0.90 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage TJ = 150°C TJ = 100°C TJ = −55°C TJ = 25°C 0.1 1 10 0.10 0.30 0.50 0.70 0.90 TJ = −55°C TJ = 25°C TJ = 150°C TJ = 100°C VF, MAXIMUM FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage |
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