2003 Aug 20

2

Philips Semiconductors

Product specification

Schottky barrier diode

1PS10SB63

FEATURES

• Very low diode capacitance

• Low forward voltage

• Leadless ultra small plastic package

(1.0 mm

× 0.6 mm × 0.5 mm)

• Power dissipation comparable to SOT23.

APPLICATIONS

• Ultra high-speed switching

• High frequency detection

• Zero bias detection

• Mobile communication, digital (still) cameras, PDA’s and

PCMCIA cards.

DESCRIPTION

An epitaxial Schottky barrier diode encapsulated in a

SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

handbook, halfpage

MDB391

Bottom view

Fig.1 Simplified outline (SOD882), pin

configuration and symbol.

Marking code: S4.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

5V

continuous forward current

−

20

mA

repetitive peak forward current

−

400

mA

non-repetitive peak forward current

JEDEC method

−

550

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C