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NE57605 bảng dữ liệu(PDF) 4 Page - NXP Semiconductors |
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4 / 10 page Philips Semiconductors Product data NE57605 Lithium-ion battery protector for 3 or 4 cell battery packs 2001 Oct 03 4 MAXIMUM RATINGS SYMBOL PARAMETER MIN. MAX. UNIT VCC(max) Power supply voltage –0.3 +24 V VCF(max) CF pin impressed voltage –0.3 +24 V VSEL(max) SEL pin impressed voltage –0.3 +24 V VCON(max) CON pin impressed voltage –0.3 +24 V Topr Operating ambient temperature range –20 +70 °C Tstg Storage temperature –40 +125 °C PD Power dissipation – 300 mW ELECTRICAL CHARACTERISTICS Tamb = 25 °C; VIN = VCE, unless otherwise specified. SYMBOL PARAMETER CONDITIONS Min. Typ. Max. UNIT ICC1 Current consumption 1 (VCC pin) VCELL = 4.4 V; CON = 0 V – 55 110 µA ICC2 Current consumption 2 (VCC pin) VCELL = 3.5 V; CON = 0 V – 27 50 µA ICC3 Current consumption 3 (VCC pin) VCELL = 1.8 V; CON = 0 V – 2 4 µA ICC4 Current consumption 4 (VCC pin) VCELL = 3.5 V; CON = VCC – 12 20 µA ICC5 Current consumption 5 (VCC pin) VCELL = 1.8 V; CON = VCC – 1 2 µA I1V4 Consumption current (V4 pin) 1 VCELL = 4.4 V – 10 20 µA I2V4 Consumption current (V4 pin) 2 VCELL = 3.5 V – 8 15 µA I3V4 Consumption current (V4 pin) 3 VCELL = 1.8 V – 2.5 5.0 µA IV3 V3 pin input current VCELL = 3.5 V –300 0 +300 nA IV2 V2 pin input current VCELL = 3.5 V –300 0 +300 nA IV1 V1 pin input current VCELL = 3.5 V –300 0 +300 nA VCELLU Overcharge detection voltage VCELL: 4.2 V → 4.4 V; Tamb = 0 ∼ 50 °C 4.10 4.35 4.60 V ∆VU Overcharge hysteresis voltage VCELL: 4.2 V → 4.4 V → 3.9 V – 200 260 mV tOV Overcharge sensing dead time COV = 0.1 µF 0.5 1.0 1.5 s VCELLS Overdischarge detection voltage VCELL: 3.5 V → 1.8 V 2.20 2.30 2.40 V VCELLD Discharge resume voltage VCELL: 1.8 V → 3.5 V 2.85 3.00 3.15 V ∆VDS Overdischarge hysteresis voltage VCELLD – VCELLS 0.45 0.70 0.95 V tCDC Overdischarge sensing dead time CDC = 0.1 µF 0.5 1.0 1.5 s VOC Overcurrent detection voltage VCC – VCS; DF 135 150 165 mV ∆VOC Overcurrent hysteresis voltage – 20 40 mV tCOL1 Overcurrent sensing dead time 1 COL = 0.001 µF 5 10 15 ms tCOL2 Overcurrent sensing dead time 2 COL = 0.001 µF; VCC – CS > 1.0 V – 1.5 3.0 ms tCOL3 Overcurrent sensing dead time 3 COL = 0.001 µF 5 10 15 ms Overcurrent reset conditions Load release conditions 500 k Ω ISODCH DF pin source current VCELL = 1.8 V; SW1: A VDF = VCC–0.8 V 20 – – µA ISIDCH DF pin sink current VCELL = 3.5 V; SW1: A VDF = 0.8 V 20 – – µA VTHDCH DF pin output voltage HIGH VCC–VDF; ISO = 20 µA; SW1: B – – 0.8 V VTHDCL DF pin output voltage LOW VDF–GND; ISI = –20 µA; SW1: B – – 0.8 V ISIOV OV pin sink current VOV = 0.4 V; Tamb = –20 °C to +70 °C 100 – – µA ILKOV OV pin leak current VOV = 24 V – – 0.1 µA CON pin LOW voltage DF = HIGH – – 0.4 V CON pin HIGH voltage DF = LOW VCC–0.4 – – V CON pin current VCELL = 3.5 V; CON = 0.4 V – 1 2 µA SEL pin LOW voltage for 3 cell – – 0.4 V SEL pin HIGH voltage for 4 cell VCC–0.4 – – V SEL pin current VCELL = 3.5 V; SEL = 0.4 V – 1 2 µA |
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