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NE57605 bảng dữ liệu(PDF) 4 Page - NXP Semiconductors

tên linh kiện NE57605
Giải thích chi tiết về linh kiện  Lithium-ion Battery Protector for 3 or 4 cell battery packs
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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NE57605 bảng dữ liệu(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product data
NE57605
Lithium-ion battery protector for
3 or 4 cell battery packs
2001 Oct 03
4
MAXIMUM RATINGS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC(max)
Power supply voltage
–0.3
+24
V
VCF(max)
CF pin impressed voltage
–0.3
+24
V
VSEL(max)
SEL pin impressed voltage
–0.3
+24
V
VCON(max)
CON pin impressed voltage
–0.3
+24
V
Topr
Operating ambient temperature range
–20
+70
°C
Tstg
Storage temperature
–40
+125
°C
PD
Power dissipation
300
mW
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; VIN = VCE, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Min.
Typ.
Max.
UNIT
ICC1
Current consumption 1 (VCC pin)
VCELL = 4.4 V; CON = 0 V
55
110
µA
ICC2
Current consumption 2 (VCC pin)
VCELL = 3.5 V; CON = 0 V
27
50
µA
ICC3
Current consumption 3 (VCC pin)
VCELL = 1.8 V; CON = 0 V
2
4
µA
ICC4
Current consumption 4 (VCC pin)
VCELL = 3.5 V; CON = VCC
12
20
µA
ICC5
Current consumption 5 (VCC pin)
VCELL = 1.8 V; CON = VCC
1
2
µA
I1V4
Consumption current (V4 pin) 1
VCELL = 4.4 V
10
20
µA
I2V4
Consumption current (V4 pin) 2
VCELL = 3.5 V
8
15
µA
I3V4
Consumption current (V4 pin) 3
VCELL = 1.8 V
2.5
5.0
µA
IV3
V3 pin input current
VCELL = 3.5 V
–300
0
+300
nA
IV2
V2 pin input current
VCELL = 3.5 V
–300
0
+300
nA
IV1
V1 pin input current
VCELL = 3.5 V
–300
0
+300
nA
VCELLU
Overcharge detection voltage
VCELL: 4.2 V → 4.4 V; Tamb = 0 ∼ 50 °C
4.10
4.35
4.60
V
∆VU
Overcharge hysteresis voltage
VCELL: 4.2 V → 4.4 V → 3.9 V
200
260
mV
tOV
Overcharge sensing dead time
COV = 0.1 µF
0.5
1.0
1.5
s
VCELLS
Overdischarge detection voltage
VCELL: 3.5 V → 1.8 V
2.20
2.30
2.40
V
VCELLD
Discharge resume voltage
VCELL: 1.8 V → 3.5 V
2.85
3.00
3.15
V
∆VDS
Overdischarge hysteresis voltage
VCELLD – VCELLS
0.45
0.70
0.95
V
tCDC
Overdischarge sensing dead time
CDC = 0.1 µF
0.5
1.0
1.5
s
VOC
Overcurrent detection voltage
VCC – VCS; DF
135
150
165
mV
∆VOC
Overcurrent hysteresis voltage
20
40
mV
tCOL1
Overcurrent sensing dead time 1
COL = 0.001 µF
5
10
15
ms
tCOL2
Overcurrent sensing dead time 2
COL = 0.001 µF; VCC – CS > 1.0 V
1.5
3.0
ms
tCOL3
Overcurrent sensing dead time 3
COL = 0.001 µF
5
10
15
ms
Overcurrent reset conditions
Load release conditions 500 k
ISODCH
DF pin source current
VCELL = 1.8 V; SW1: A VDF = VCC–0.8 V
20
µA
ISIDCH
DF pin sink current
VCELL = 3.5 V; SW1: A VDF = 0.8 V
20
µA
VTHDCH
DF pin output voltage HIGH
VCC–VDF; ISO = 20 µA; SW1: B
0.8
V
VTHDCL
DF pin output voltage LOW
VDF–GND; ISI = –20 µA; SW1: B
0.8
V
ISIOV
OV pin sink current
VOV = 0.4 V; Tamb = –20 °C to +70 °C
100
µA
ILKOV
OV pin leak current
VOV = 24 V
0.1
µA
CON pin LOW voltage
DF = HIGH
0.4
V
CON pin HIGH voltage
DF = LOW
VCC–0.4
V
CON pin current
VCELL = 3.5 V; CON = 0.4 V
1
2
µA
SEL pin LOW voltage
for 3 cell
0.4
V
SEL pin HIGH voltage
for 4 cell
VCC–0.4
V
SEL pin current
VCELL = 3.5 V; SEL = 0.4 V
1
2
µA


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