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2SD973A bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor |
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2SD973A bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification s Features q Low collector to emitter saturation voltage VCE(sat). q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9 ±0.1 0.55 ±0.1 0.45 ±0.05 2.5 ±0.1 1.0 1.5 1.5 R0.9 R0.9 0.85 2.5 2.5 1 2 3 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2SD973 2SD973A 2SD973 2SD973A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA *2 VCE = 5V, IC = 1A *2 IC = 500mA, IB = 50mA *2 IC = 500mA, IB = 50mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0. f = 1MHz min 30 60 25 50 5 85 50 typ 160 100 0.2 0.85 200 11 max 0.1 340 0.4 1.2 20 Unit µA V V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2SD973 2SD973A 2SD973 2SD973A *2 Pulse measurement *1h FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 |
Số phần tương tự - 2SD973A |
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Mô tả tương tự - 2SD973A |
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