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2SD968A bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN epitaxial planer type(For low-frequency driver amplification)
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1
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A
s Features
q
High collector to emitter voltage VCEO.
q
Large collector power dissipation PC.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–62
3:Emitter
Mini Power Type Package
4.5
±0.1
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
100
120
100
120
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD968
2SD968A
2SD968
2SD968A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
*2
VCE = 5V, IC = 500mA
*2
IC = 500mA, IB = 50mA
*2
IC = 500mA, IB = 50mA
*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
100
120
5
90
50
typ
100
0.2
0.85
120
11
max
220
0.6
1.2
20
Unit
V
V
V
V
MHz
pF
*1h
FE1 Rank classification
Rank
Q
R
hFE1
90 ~ 155
130 ~ 220
2SD968
WQ
WR
2SD968A
VQ
VR
Marking symbol :
W(2SD968)
V(2SD968A)
Marking
Symbol
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
2SD968
2SD968A
*2 Pulse measurement


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