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2SD0814 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
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1
Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s Features
q
High collector to emitter voltage VCEO.
q
Low noise voltage NV.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.4
±0.2
0.1 to 0.3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
185
150
185
5
100
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SD814
2SD814A
2SD814
2SD814A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
ICBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
NV
Conditions
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
150
185
5
90
typ
150
2.3
150
max
1
330
1
Unit
µA
V
V
V
MHz
pF
mV
2SD814
2SD814A
*h
FE Rank classification
Rank
Q
R
S
hFE
90 ~ 155
130 ~ 220
185 ~ 330
2SD814
PQ
PR
PS
2SD814A
LQ
LR
LS
Marking symbol :
P(2SD814)
L(2SD814A)
Marking
Symbol


Số phần tương tự - 2SD0814

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