STN8205AAST8RG datasheet(2/8 Pages) VBSEMI

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Notes:

a. For design aid only; not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.5

1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 200

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 25 V, VGS = 0 V

1

µA

VDS = 25 V, VGS = 0 V, TJ = 70 °C

25

On-State Drain Currentb

ID(on)

VDS ≤ 5 V, VGS = 4.5 V

30

A

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 6.5 A

0.022

0.027

Ω

VGS = 2.5 V, ID = 5.5 A

0.032

0.040

Forward Transconductanceb

gfs

VDS = 10 V, ID = 6.5 A

30

S

Diode Forward Voltageb

VSD

IS = 1.5 A, VGS = 0 V

0.71

1.2

V

Dynamica

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 6.5 A

12

18

nC

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

245

365

ns

Rise Time

tr

330

495

Turn-Off Delay Time

td(off)

860

1300

Fall Time

tf

510

765

Gate-Current vs. Gate-Source Voltage

0

2

4

6

8

10

0

3

6

9

12

15

18

VGS - Gate-to-Source Voltage (V)

Gate Current vs. Gate-Source Voltage

0369

12

15

0.01

100

10000

TJ = 25 °C

0.1

1

10

1000

VGS - Gate-to-Source Voltage (V)

TJ = 150 °C

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www.VBsemi.tw

STN8205AAST8RG

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