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VS-100BGQ03 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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VS-100BGQ03 bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 6 page VS-100BGQ030 www.vishay.com Vishay Semiconductors Revision: 12-Jun-15 1 Document Number: 94579 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Schottky Rectifier, 100 A FEATURES • 150 °C max. operating junction temperature • High frequency operation • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC®-JESD 47 • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-100BGQ030 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. PRODUCT SUMMARY Package PowerTab® IF(AV) 100 A VR 30 V VF at IF 0.56 V IRM 460 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 9 mJ Cathode Anode PowerTab® MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 100 A TC 106 °C VRRM 30 V IFSM tp = 5 μs sine 4500 A VF 100 Apk (typical) 0.49 V TJ 150 °C TJ Range -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL 100BGQ030 UNITS Maximum DC reverse voltage VR 30 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TC = 106 °C, rectangular waveform 100 A Maximum peak one cycle non-repetitive surge current IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 4500 A 10 ms sine or 6 ms rect. pulse 850 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 8 A, L = 1.12 mH 36 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 8A |
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