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VS-100BGQ01 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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1 / 7 page VS-100BGQ015 www.vishay.com Vishay Semiconductors Revision: 12-Jun-15 1 Document Number: 94578 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Schottky Rectifier, 100 A FEATURES • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC®-JESD47 • 125 °C max. operating junction temperature (VR < 5 V) • High frequency operation • Continuous high current operation • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-100BGQ015 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. PRODUCT SUMMARY Package PowerTab® IF(AV) 100 A VR 15 V VF at IF 0.45 V IRM 870 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 9 mJ Cathode Anode PowerTab® MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 100 A TC 88 °C VRRM 15 V IFSM tp = 5 μs sine 5000 A VF 100 Apk (typical) 0.39 V TJ 125 °C TJ Range -55 to +125 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-100BGQ015 UNITS Maximum DC reverse voltage VR TJ = 100 °C 15 V TJ = 125 °C 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TC = 88 °C, rectangular waveform 100 A Maximum peak one cycle non-repetitive surge current IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 5000 A 10 ms sine or 6 ms rect. pulse 1000 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical 2A |
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