RFM06U3X

1

Field Effect Transistors Silicon N-Channel MOS

RFM06U3X

RFM06U3X

RFM06U3X

RFM06U3X

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

VHF/UHF-Band Power Amplifiers

Note:

This product is intended for radio-frequency power amplifiers of telecommunications equipment. This product

is neither intended nor warranted for any other use. Do not use this product except for radio-frequency power

amplifiers of telecommunications equipment.

2.

2.

2.

2. Features

Features

Features

Features

(1)

(2)

(3)

3.

3.

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Pw-X

1: Gate

2: Source

3: Drain

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation

Channel temperature

Storage temperature

Symbol

Note

(Note 1)

Rating

16

3

5

20

150

-45 to 150

Unit

V

V

A

W





Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note:

This transistor is sensitive to electrostatic discharge and should be handled with care.

Note:

Care should be taken not to drop this device because it is sensitive to dropping impact stress.

2016-10-04

Rev.3.0

©2016 Toshiba Corporation