GT30J110SRA

2

Characteristics

Collector-emitter voltage

Gate-emitter voltage

Collector current (DC)

Collector current (DC)

Collector current (1 ms)

Non-repetitive peak collector current

Diode forward current (DC)

Diode forward current (DC)

Diode forward current (100 µs)

Collector power dissipation

Junction temperature

Storage temperature

Mounting torque

(Note 1)

Symbol

TOR

Rating

1100

±25

60

30

120

250

60

30

120

312

175

-55 to 175

0.8

Unit

V

V

A

A

A

A

A

W

�

�

N�m

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher

temperature.

In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads

to thermorunaway and results in destruction.

Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.

5. Thermal Characteristics

Characteristics

Junction-to-case thermal resistance

Symbol

Max

0.48

Unit

�/W

2021-02-24

Rev.3.0

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