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MC100EP58DT bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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3 / 8 page MC10EP58, MC100EP58 http://onsemi.com 3 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 4.) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 4.) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single Ended) 1365 1690 1460 1755 1490 1815 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V. 4. All loading with 50 ohms to VCC–2.0 volts. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 5.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 6.) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 6.) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 5. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V. 6. All loading with 50 ohms to VCC–2.0 volts. 10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 7.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 8.) –1135 –1010 –885 –1070 –945 –820 –1010 –885 –760 mV VOL Output LOW Voltage (Note 8.) –1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560 mV VIH Input HIGH Voltage (Single Ended) –1210 –885 –1145 –820 –1085 –760 mV VIL Input LOW Voltage (Single Ended) –1935 –1610 –1870 –1545 –1810 –1485 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 7. Input and output parameters vary 1:1 with VCC. 8. All loading with 50 ohms to VCC–2.0 volts. |
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Mô tả tương tự - MC100EP58DT |
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