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2SD1254 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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2SD1254 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB931
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector current IC
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
130
80
7
6
3
30
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
min
80
45
60
typ
30
0.5
2.5
0.15
max
10
50
260
0.5
1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
*h
FE2 Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)


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