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SM6F03NSU bảng dữ liệu(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω)VGS = 10 V 1.8 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID A Continuous Drain Current TC = 100 °C 4.2 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.48 W/°C Single Pulse Avalanche Energyb EAS 325 mJ Repetitive Avalanche Currenta IAR 4 A Repetitive Avalanche Energya EAR 6mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 2.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m S N-Channel MOSFET G D TO-252 GD S Top View 4.5 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM6F03NSU 1 |
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