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SIR424DP-T1-GE3 bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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SIR424DP-T1-GE3 bảng dữ liệu(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 7 page Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 35 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 7.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 90 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 32 A 0.0018 VGS = 4.5 V, ID = 29 A 0.002 5 Forward Transconductancea gfs VDS = 15 V, ID = 32 A 160 S Dynamicb Input Capacitance Ciss VDS= 12.5 V, VGS = 0 V, f = 1 MHz 2765 pF Output Capacitance Coss 1725 Reverse Transfer Capacitance Crss 970 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 32 A 171 257 nC VDS = 15 V, VGS = 4.5 V, ID = 29 A 81.5 123 Gate-Source Charge Qgs 34 Gate-Drain Charge Qgd 29 Gate Resistance Rg f = 1 MHz 1.4 2.1 Turn-On Delay Time td(on) VDD = 15 V, RL = 0.555 ID 27 A, VGEN = 10 V, Rg = 1 18 27 ns Rise Time tr 11 17 Turn-Off Delay Time td(off) 70 105 Fall Time tf 10 15 Turn-On Delay Time td(on) VDD = 15 V, RL = 0.625 ID 24 A, VGEN = 4.5 V, Rg = 1 55 83 Rise Time tr 180 270 Turn-Off Delay Time td(off) 55 83 Fall Time tf 12 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 100 A Pulse Diode Forward Currenta ISM 200 Body Diode Voltage VSD IS = 22 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta 27 ns Reverse Recovery Rise Time tb 25 SIR424DP-T1-GE3 2 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw |
Số phần tương tự - SIR424DP-T1-GE3 |
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Mô tả tương tự - SIR424DP-T1-GE3 |
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