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2SC2377 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor

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Giải thích chi tiết về linh kiện  Silicon NPN epitaxial planer type(For high-frequency amplification)
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1
Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency fT.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
0.85
2.5
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
15
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
Symbol
ICBO
ICEO
IEBO
hFE
*
VBE
fT
NF
PG
Cre
Conditions
VCB = 10V, IE = 0
VCE = 20V, IB = 0
VEB = 3V, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCE = 6V, IC = 1mA
min
65
450
20
typ
720
650
3.3
24
0.8
max
100
10
1
260
5
1
*h
FE Rank classification
Rank
C
D
hFE
65 ~ 160
100 ~ 260
Unit
nA
µA
µA
mV
MHz
dB
dB
pF


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