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PK648BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK648BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 30 1.35 1.75 2.35 ±100 nA 1 10 3.3 5.2 2.6 3.4 60 S 2071 329 225 1.9 Ω VGS =10V 40.9 VGS =4.5V 21.2 6.3 9.6 26 12 50 10 35 A 1 V 25 nS 12 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 26A. VGS = 4.5V, ID = 15A V IF = 18A, dlF/dt = 100A / mS UNITS Coss VDS = 0V, VGS = ±20V gfs RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Ciss VDS = 5V, ID = 18A pF IDSS Qrr Reverse Recovery Charge Continuous Current 3 Forward Voltage 1 Reverse Recovery Time IS VSD Forward Transconductance 1 trr IF = 18A, VGS = 0V nS VDS = 15V, ID @ 18A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) td(on) tr td(off) tf Turn-On Delay Time 2 Rise Time 2 Turn-Off Delay Time 2 Fall Time 2 Gate Threshold Voltage Drain-Source On-State Resistance 1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage VDS = 15V, ID = 18A Gate-Drain Charge 2 Gate-Source Charge 2 Reverse Transfer Capacitance Gate Resistance Qg Total Gate Charge 2 Qgd Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 18A VDS = 20V, VGS = 0V, TJ = 55 °C LIMITS REV 1.0 2 2016/11/4 |
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