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PK648BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 26A. Pulsed Drain Current 1 Junction-to-Ambient 2 Junction-to-Case W VGS Gate-Source Voltage RqJA A V 3.6 °C / W 35 75 52 ±20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C -55 to 150 IAS 37 UNITS 150 47 TYPICAL VDS 30 V ID RqJC LIMITS TC = 25 °C THERMAL RESISTANCE Avalanche Energy L =0.1mH ID TC = 25 °C 30V Continuous Drain Current 3 TC = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 3.4mΩ @V GS = 10V 75A 71 TA = 70 °C TC = 100 °C Power Dissipation TJ, Tstg PD mJ 14 PD W 1.5 EAS MAXIMUM 19.8 TA= 70 °C 15.8 Power Dissipation TA = 25 °C 2.4 Continuous Drain Current TA = 25 °C ID Avalanche Current REV 1.0 1 2016/11/4 |
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