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TLV2186 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TLV2186 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
4 / 39 page 4 TLV2186 SBOS947A – JULY 2019 – REVISED JUNE 2020 www.ti.com Product Folder Links: TLV2186 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended OperatingConditions. Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability. (2) Short-circuit to ground, one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VS Supply voltage, VS = (V+) – (V–) 26 V Input voltage Common-mode (V–) –0.5 (V+) + 0.5 V Differential (V+) – (V–) + 0.2 Output short-circuit(2) Continuous TJ Operating junction temperature -40 150 °C Tstg Storage temperature -65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 1500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS Supply Voltage Single supply 4.5 24 Dual supply ±2.25 ±12 V TA Specified temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TLV2186 UNIT D (SOIC) DSG (WSON) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 129.4 70.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 69.6 86.2 °C/W RθJB Junction-to-board thermal resistance 72.8 36.8 °C/W ΨJT Junction-to-top characterization parameter 20.8 2.9 °C/W ΨJB Junction-to-board characterization parameter 72.0 36.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 13.3 °C/W |
Số phần tương tự - TLV2186_V01 |
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Mô tả tương tự - TLV2186_V01 |
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