7.3 Feature Description

7.3.1 Input and ESD Protection

The OPA862 is built using a high-speed complementary bipolar process. The internal junction breakdown

voltages are relatively low for these very small geometry devices. These breakdowns are reflected in Section

6.1. As shown in Figure 7-1 all device pins are protected with internal ESD protection diodes to the power

supplies.

These diodes provide moderate protection to input overdrive voltages beyond the supplies as well. The

protection diodes can typically support 10-mA continuous current. Where higher currents are possible (for

example, in systems with ±12-V supply parts driving into the OPA862), add current limiting series resistors in

series with the inputs to limit the current. Keep these resistor values as low as possible because high values can

degrade both noise performance and frequency response. The OPA862 has back-to-back ESD diodes between

the VIN and VFB pins. As a result, the differential input voltage between the VIN and VFB pins must be limited to

0.7 V or less to keep from forward biasing these back-to-back ESD diodes. The diodes are robust enough to

survive transient conditions such as those common during slew conditions. In the event the differential input

voltage exceeds 0.7 V, these back-to-back diodes forward bias and protect the amplifier but the current must be

limited per the specifications in Section 6.1 to avoid permanent damage to these diodes or the amplifier.

A1

+

±

A2

+

±

700

700

OPA862

VREF

VS±

VS+

VOUT±

PD

VFB

VIN

VOUT+

Power Supply

ESD Cell

Figure 7-1. Internal ESD Protection

OPA862

SBOS919C – AUGUST 2019 – REVISED AUGUST 2020

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