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WSE3098 bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSE3098 bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID= 8A --- 18.5 26 m Ω VGS=4.5V , ID= 5A --- 23 38 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 5.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.5 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID= 8A --- 3.9 6.9 nC Qgs Gate-Source Charge --- 1.6 2.1 Qgd Gate-Drain Charge --- 1.4 2.6 Td(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω ID=6A , RL=15Ω --- 5.2 4.4 ns Tr Rise Time --- 8.8 69 Td(off) Turn-Off Delay Time --- 13.5 24.8 Tf Fall Time --- 3.4 9.6 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 408 pF Coss Output Capacitance --- 72 Crss Reverse Transfer Capacitance --- 40 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0. 5mH , IAS=7.2A 6 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 2.0 A ISM Pulsed Source Current 2,6 --- --- 32 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1. 1 V trr Reverse Recovery Time IF= 8A , dI/dt=100A/µs , TJ=25℃ --- 12 --- nS Qrr Reverse Recovery Charge --- 3.5 --- nC Diode Characteristics Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0. 5mH,IAS=7.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) WSE3098 N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 --- --- --- |
Số phần tương tự - WSE3098 |
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Mô tả tương tự - WSE3098 |
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