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LMK61E08 bảng dữ liệu(PDF) 25 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  LMK61E08 Ultra-Low Jitter Programmable Oscillator With Internal EEPROM
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LMK61E08 bảng dữ liệu(HTML) 25 Page - Texas Instruments

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LMK61E08
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SNAS805 – JUNE 2020
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Programming (continued)
address to be incremented and a read will take place of the next SRAM address. Access to SRAM will
terminate at the end of current I2C transaction.
NOTE
It is possible to increment SRAM address incorrectly when 2 successive accesses are
made to R51.
8.5.7 Read EEPROM
The contents of the EEPROM can be read out, one word at a time, starting with that of the requested address.
Following details the programming sequence for an EEPROM read by address.
1. Write the EEPROM address in R51.
2. The EEPROM data located at the address specified in the step above can be obtained by reading R52 in the
same I2C transaction. Any additional access that is part of the same transaction will cause the EEPROM
address to be incremented and a read will take place of the next EEPROM address. Access to EEPROM will
terminate at the end of current I2C transaction.
NOTE
It is possible to increment EEPROM address incorrectly when 2 successive accesses are
made to R51.


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