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DRV8353M bảng dữ liệu(PDF) 58 Page - Texas Instruments |
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DRV8353M bảng dữ liệu(HTML) 58 Page - Texas Instruments |
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58 / 76 page  14.2.1.1 Design Requirements Table 14-1 lists the example input parameters for the system design. Table 14-1. Design Parameters EXAMPLE DESIGN PARAMETER REFERENCE EXAMPLE VALUE Power supply voltage VVM, VVDRAIN, VVIN 48 V MOSFET part number MOSFET CSD19535KCS MOSFET total gate charge Qg 78 nC (typical) at VVGS = 10 V MOSFET gate to drain charge Qgd 13 nC (typical) Target output rise time tr 100 to 300 ns Target output fall time tf 50 to 150 ns PWM frequency ƒPWM 45 kHz Buck regulator output voltage VVCC 3.3 V Buck regulator output current IVCC 100 mA Maximum motor current Imax 100 A ADC reference voltage VVREF 3.3 V Winding sense current range ISENSE –40 A to +40 A Motor RMS current IRMS 28.3 A Sense resistor power rating PSENSE 3 W System ambient temperature TA –20°C to +60°C 14.2.1.2 Detailed Design Procedure Table 14-2 lists the recommended values of the external components for the gate driver. Table 14-2. DRV8353M Gate-Driver External Components COMPONENTS PIN 1 PIN 2 RECOMMENDED CVM1 VM GND X5R or X7R, 0.1-µF, VM-rated capacitor CVM2 VM GND ≥ 10 µF, VM-rated capacitor CVCP VCP VM X5R or X7R, 1-µF, 16-V capacitor CVGLS VGLS GND X5R or X7R, 1-µF, 16-V capacitor CSW CPH CPL X5R or X7R, 47-nF, VDRAIN-rated capacitor CDVDD DVDD DGND X5R or X7R, 1-µF, 6.3-V capacitor RnFAULT VCC(1) nFAULT Pullup resistor RSDO VCC(1) SDO Pullup resistor RIDRIVE IDRIVE GND or DVDD DRV8353M hardware interface RVDS VDS GND or DVDD DRV8353M hardware interface RMODE MODE GND or DVDD DRV8353M hardware interface RGAIN GAIN GND or DVDD DRV8353M hardware interface CVREF VREF GND or DGND Optional capacitor rated for VREF RASENSE SPA SNA and GND Sense shunt resistor RBSENSE SPB SNB and GND Sense shunt resistor RCSENSE SPC SNC and GND Sense shunt resistor (1) VCC is not a pin on the DRV8353M family of devices, but a VCC supply voltage pullup is required for the open-drain output nFAULT and SDO. These pins can also be pulled up to DVDD. 14.2.1.2.1 External MOSFET Support The DRV833M family of devices MOSFET support is based on the MOSFET gate charge, VCP charge-pump capacity, VGLS regulator capacity, and output PWM switching frequency. For a quick calculation of MOSFET driving capacity, use Equation 5 and Equation 6 for three phase BLDC motor applications. DRV8353M SLVSFO2 – JULY 2020 www.ti.com 58 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: DRV8353M |
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Mô tả tương tự - DRV8353M |
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