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WSD3060DN bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD3060DN bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
2 / 5 page Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID= 40A --- 4. 7 5. 7 m Ω VGS=4.5V , ID= 20A --- 5.8 7.6 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1. 8 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -6.16 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID= 40A --- 95 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.0 2.9 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID= 40A --- 20 28.0 nC Qgs Gate-Source Charge --- 7.6 10.6 Qgd Gate-Drain Charge --- 7.2 10.1 Td(on) Turn-On Delay Time VDD=15V , VGen=10V , RG=3.3Ω, ID= 1A, RL=10Ω. --- 15 28 ns Tr Rise Time --- 13 24 Td(off) Turn-Off Delay Time --- 32 57 Tf Fall Time --- 9 17 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1500 1820 pF Coss Output Capacitance --- 260 310 Crss Reverse Transfer Capacitance --- 130 190 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0. 5mH , IAS=20A 63 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current 2,6 --- --- 1 40 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF= 40A , dI/dt=100A/µs , TJ=25℃ --- 21 --- nS Qrr Reverse Recovery Charge --- 7 --- nC Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0. 5mH,IAS=20A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSD3060DN Page 2 www.winsok.tw Dec.2014 N-Ch MOSFET |
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Mô tả tương tự - WSD3060DN |
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