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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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WSD3045DN bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD3045DN bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 11 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID= 6A --- 8.5 10.5 RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID= 5A --- 10 14 m Ω VGS(th) Gate Threshold Voltage 1.3 1.8 2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.8 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=15V , ID= 5A --- 10 --- S Rg Gate Resistance VDS=24V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- 2.7 --- Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge VDS=20V , VGS=4.5V , ID= 6A --- 1.7 --- nC Td(on) Turn-On Delay Time --- 5 --- Tr Rise Time --- 11 --- Td(off) Turn-Off Delay Time --- 11.5 --- Tf Fall Time VDD=12V , VGS=10V , RG=3.3Ω ID=5A --- 2.6 --- ns Ciss Input Capacitance --- 250 --- Coss Output Capacitance --- 40 --- Crss Reverse Transfer Capacitance VDS=25V , VGS=0V , f=1MHz --- 30 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0. 5mH , IAS=10A 5 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- 6 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- 15 A VSD Diode Forward Voltage 2 VGS=0V , IS=5A , TJ=25℃ --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0. 5mH,IAS=10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics WSD3045DN N-Ch and P-Channel MOSFET Page 2 www.winsok.tw Dec.2014 |
Số phần tương tự - WSD3045DN |
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Mô tả tương tự - WSD3045DN |
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