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WSD3040DN56 bảng dữ liệu(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD3040DN56 bảng dữ liệu(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
1 / 5 page Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1 3 1 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 14.4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 11.6 A IDM@TC=25℃ 300μs Pulse Drain Current Tested 2 123 A EAS Single Pulse Avalanche Energy 3 50 mJ IAS Avalanche Current 14 A PD@TC=25℃ Total Power Dissipation 4 31 W PD@TC=100℃ Total Power Dissipation 4 12.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 47 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 3.9 ℃ /W BVDSS RDSON ID 30V 7mΩ 50A Absolute Maximum Ratings Thermal Data General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available DFN5X6-8 Pin Configuration Product Summery WSD3040DN56 N-Ch MOSFET Page 1 www.winsok.tw Dec.2014 The WSD3040DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. The WSD3040DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . |
Số phần tương tự - WSD3040DN56 |
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Mô tả tương tự - WSD3040DN56 |
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