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MJE5740 bảng dữ liệu(PDF) 4 Page - ON Semiconductor

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MJE5740 bảng dữ liệu(HTML) 4 Page - ON Semiconductor

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MJE5740 MJE5741 MJE5742
4
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100
200
300
500
0
400
16
5
10
8
1
0.02
100
0.1
10
20
200
400
3
0.5
50
0.3
0.05
dc
1 ms
100
µs
MJE5742
MJE5741
MJE5740
VBE(off) ≤ 5 V
TJ = 100°C
6
CURVES APPLY BELOW RATED VCEO
10
µs
MJE5742
MJE5741
MJE5740
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
7
5
2
1
0.7
0.2
0.3
5
0.5
10
3
3
0.3
0.2
7
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
0.7
0.5
0.2
0.1
0.07
0.02
0.3
Figure 8. Turn–On Time
5
0.05
1
Figure 9. Turn–Off Time
3
VCC = 250 V
IB1 = IB2
IC/IB = 20
ts
tr
tf
td
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.3
0.03
0.2
7
RESISTIVE SWITCHING PERFORMANCE


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