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Motorola Bipolar Power Transistor Device Data

High Voltage PNP Silicon Power

Transistors

. . . designed for line operated audio output amplifier, SWITCHMODE power supply

drivers and other switching applications.

• 300 V to 400 V (Min) — VCEO(sus)

• 1.0 A Rated Collector Current

• Popular TO–220 Plastic Package

• PNP Complements to the TIP47 thru TIP50 Series

MAXIMUM RATINGS

Rating

Symbol

MJE5730

MJE5731

MJE5731A

Unit

Collector–Emitter Voltage

VCEO

300

350

375

Vdc

Collector–Base Voltage

VCB

300

350

375

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

1.0

3.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Total Power Dissipation

@ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inducting Load Energy (See Figure 10)

E

20

mJ

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

3.125

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE5730/D

MJE5730

MJE5731

MJE5731A

1.0 AMPERE

POWER TRANSISTORS

PNP SILICON

300 – 350 – 400 VOLTS

40 WATTS

CASE 221A–06

TO–220AB

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