1

Motorola Bipolar Power Transistor Device Data

High-Voltage

High Power

Transistors

. . . designed for use in high power audio amplifier applications and high voltage

switching regulator circuits.

• High Collector–Emitter Sustaining Voltage —

NPN

PNP

VCEO(sus) = 160 Vdc — MJE4343 MJE4353

• High DC Current Gain — @ IC = 8.0 Adc

hFE = 35 (Typ)

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector–Emitter Voltage

VCEO

160

Vdc

Collector–Base Voltage

VCB

160

Vdc

Emitter–Base Voltage

VEB

7.0

Vdc

Collector Current — Continuous

Peak (1)

IC

16

20

Adc

Base Current — Continuous

IB

5.0

Adc

Total Power Dissipation @ TC = 25_C

PD

125

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.0

_C/W

(1) Pulse Test: Pulse Width

v 5.0 µs, Duty Cycle w 10%.

3.5

0

Figure 1. Power Derating

Reference: Ambient Temperature

TA, AMBIENT TEMPERATURE (°C)

25

50

100

125

3.0

2.5

0.5

75

150

1.0

1.5

2.0

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE4343/D

MJE4343

MJE4353

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

160 VOLTS

NPN

PNP

CASE 340D–02

TO–218 TYPE