1

Motorola Bipolar Power Transistor Device Data

Silicon Power Transistors

The MJ15023 and MJ15025 are PowerBase power transistors designed for high

power audio, disk head positioners and other linear applications.

• High Safe Operating Area (100% Tested) —

2 A @ 80 V

• High DC Current Gain —

hFE = 15 (Min) @ IC = 8 Adc

MAXIMUM RATINGS

Rating

Symbol

MJ15023

MJ15025

Unit

Collector–Emitter Voltage

VCEO

200

250

Vdc

Collector–Base Voltage

VCBO

350

400

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector–Emitter Voltage

VCEX

400

Vdc

Collector Current — Continuous

Peak (1)

IC

16

30

Adc

Base Current — Continuous

IB

5

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

250

1.43

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.70

_C/W

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v 10%.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ15023/D

MJ15023

MJ15025

16 AMPERE

SILICON

POWER TRANSISTORS

200 AND 250 VOLTS

250 WATTS

*Motorola Preferred Device

*

PNP

CASE 1–07

TO–204AA

(TO–3)

REV 7