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MJ11013 bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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3 / 4 page MJ11013 MJ11015 MJ11012 MJ11014 MJ11016 3 Motorola Bipolar Power Transistor Device Data 30 k 0.3 Figure 2. DC Current Gain (1) IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1 2 3 10 20 30 7 k 3 k 2 k 700 Figure 3. Small–Signal Current Gain 2 10 f, FREQUENCY (kHz) 20 30 50 70 200 300 500 1.0 k 0.2 0.05 0.02 0.01 10 k 5 k VCE = 5 Vdc TJ = 25°C 500 300 5 7 100 5 0.1 Figure 4. “On” Voltages (1) IC, COLLECTOR CURRENT (AMP) 100 0 VBE(sat) Figure 5. Active Region DC Safe Operating Area 20 k PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 4 3 2 1 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 3 5 10 20 200 10 5 0.01 20 2 1 0.2 0.1 0.5 0.05 0.02 50 TJ = 25°C IC/IB = 100 VCE = 3 Vdc IC = 10 mAdc TJ = 25°C 0.1 0.5 1 0.005 700 MJ11012 MJ11013, MJ11014 MJ11015, MJ11016 2 7 30 70 100 2 20 50 0.2 0.5 1 10 5 VCE(sat) PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25°C SECOND BREAKDOWN LIMITATION There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE lim- its of the transistor that must be observed for reliable opera- tions e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limita- tions imposed by secondary breakdown. |
Số phần tương tự - MJ11013 |
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Mô tả tương tự - MJ11013 |
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