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MJD127 bảng dữ liệu(PDF) 1 Page - First Silicon Co., Ltd |
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MJD127 bảng dữ liệu(HTML) 1 Page - First Silicon Co., Ltd |
1 / 2 page 2018. 10. 14 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA MJD127 MJD127 FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP127 ∙ Built-in a Damper Diode at E-C PNP Silicon Darlington Transistor Equivalent Circuit We declare that the material of product compliance with RoHS requirements. D-PAK (TO-252) DIM MILLIMETERS A B C D F H I J L 6.50 ± 0.2 5.60 ± 0.2 5.20 ± 0.2 1.50 ± 0.2 2.70 ± 0.2 2.30 ± 0.1 1.00 MAX 2.30 ± 0.2 0.5 ± 0.1 0.50 ± 0.10 E 1.6 ± 0.2 O A C I J H F F L 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER 0.95 MAX Q R 1 R 2 B C E R1 typ. =5K R2 typ. =210 PNP MAXIMUM RATINGS ( Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdow n voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-10mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 µA Collector-emitter cut-off current ICEO VCE=-50V,IB=0 -10 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-4V,IC=-4A 1000 12000 DC current gain hFE(2) VCE=-4V,IC=-8A 100 VCE(sat) 1 * IC=-4A,IB=-16mA -2 V Collector-emitter saturation v oltage VCE(sat) 2 * IC=-8A,IB=-80mA -4 V Base-emitter saturation voltage VBE(sat) * IC=-8A,IB=-80mA -4.5 V Base-emitter voltage VBE * VCE=-4V,IC=-4A -2.8 V Collector output capacit ance Cob VCB=-10V,IE=0,f=0.1MHz 300 pF *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% |
Số phần tương tự - MJD127 |
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Mô tả tương tự - MJD127 |
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