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BTT6200-1ENA bảng dữ liệu(PDF) 7 Page - Infineon Technologies AG |
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BTT6200-1ENA bảng dữ liệu(HTML) 7 Page - Infineon Technologies AG |
7 / 46 page Data Sheet 7 Rev. 1.0 2018-05-14 PROFET™+ 24 V BTT6200-1ENA General Product Characteristics Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum energy dissipation Single pulse EAS ––20 mJ IL(0) = 1 A TJ(0) = 150°C VS = 28 V P_4.1.23 Voltage at power transistor VDS ––65 V – P_4.1.26 Currents Current through ground pin I GND -20 -150 – 20 20 mA – t < 2 min P_4.1.27 Temperatures Junction temperature TJ -40 – 150 °C – P_4.1.28 Storage temperature TSTG -55 – 150 °C – P_4.1.30 ESD Susceptibility ESD susceptibility (all pins) VESD -2 – 2 kV 4) HBM P_4.1.31 ESD susceptibility OUT Pin vs. GND and VS connected VESD -4 – 4 kV 4) HBM P_4.1.32 ESD susceptibility VESD -500 – 500 V 5) CDM P_4.1.33 ESD susceptibility pin (corner pins) VESD -750 – 750 V 5) CDM P_4.1.34 1) Not subject to production test. Specified by design. 2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1. 3) Threshold limit for short circuit failures : 100 ppm. Please refer to the legal disclaimer for short circuit capability on the Back Cover of this document. 4) ESD susceptibility, Human Body Model “HBM”, according to AEC Q100-002. 5) ESD susceptibility, Charge Device Model “CDM”, according to AEC Q100-011. Table 3 Absolute Maximum Ratings1) TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. |
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